BD540 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor BD540 .
DC Current Gain - : hFE = 40(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min). Complement to Type BD539.

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Datasheet Specifications

Part number: BD540
Manufacturer: INCHANGE
File Size: 189.56 KB
Datasheet: BD540-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Po

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BD540 PNP Transistor INCHANGE

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