BD540B - PNP Transistor
*DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) *Complement to Type BD539B *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use in medium power linear and swi
