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BD540B - PNP Transistor

BD540B Description

isc Silicon PNP Power Transistor BD540B .
DC Current Gain - : hFE = 40(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). Complement to Type BD539B.

BD540B Applications

* Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Po

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Datasheet Details

Part number
BD540B
Manufacturer
INCHANGE
File Size
189.57 KB
Datasheet
BD540B-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE BD540B-like datasheet