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BD540C - PNP Transistor

BD540C Description

isc Silicon PNP Power Transistor BD540C .
DC Current Gain - : hFE = 40(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). Complement to Type BD539C.

BD540C Applications

* Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector

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Datasheet Details

Part number
BD540C
Manufacturer
INCHANGE
File Size
189.61 KB
Datasheet
BD540C-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE BD540C-like datasheet