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BD949 NPN Transistor

BD949 Description

isc Silicon NPN Power Transistor BD949 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). DC Current Gain- : hFE= 40(Min)@ IC= 500mA. Complement to Type BD950. Mini.

BD949 Applications

* Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Curren

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Datasheet Details

Part number
BD949
Manufacturer
INCHANGE
File Size
206.67 KB
Datasheet
BD949-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
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