BDT30 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistors BDT30/A/B/C .
DC Current Gain -hFE = 40(Min)@ IC= -0. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A -80V(Min)-.

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Datasheet Specifications

Part number: BDT30
Manufacturer: INCHANGE
File Size: 210.69 KB
Datasheet: BDT30-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT30 -80 VCBO Collector-Base Voltage BDT30A BDT30B -100 -120 BDT30C -140 BDT30 -40 BDT30A -60 VCEO Collector-Em

BDT30 Distributors

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BDT30 PNP Transistor INCHANGE

INCHANGE BDT30-like datasheet