BDT30C, BDT30 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistors BDT30/A/B/C .
DC Current Gain -hFE = 40(Min)@ IC= -0. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A -80V(Min)-.

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BDT30C Datasheet Preview — This datasheet PDF includes multiple part numbers: BDT30C, BDT30. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: BDT30C, BDT30
Manufacturer: INCHANGE
File Size: 210.69 KB
Datasheet: BDT30-INCHANGE.pdf
Description: PNP Transistor
Note: This datasheet PDF includes multiple part numbers: BDT30C, BDT30.
Please refer to the document for exact specifications by model.

Applications

* Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT30 -80 VCBO Collector-Base Voltage BDT30A BDT30B -100 -120 BDT30C -140 BDT30 -40 BDT30A -60 VCEO Collector-Em

BDT30C Distributors

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BDT30 PNP Transistor INCHANGE

INCHANGE BDT30C-like datasheet