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BDT61B, BDT61 NPN Transistor

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Description

isc Silicon NPN Darlington Power Transistors BDT61/A/B/C .
DC Current Gain -hFE = 750(Min)@ IC= 1. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)-.

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This datasheet PDF includes multiple part numbers: BDT61B, BDT61. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
BDT61B, BDT61
Manufacturer
INCHANGE
File Size
211.37 KB
Datasheet
BDT61-INCHANGE.pdf
Description
NPN Transistor
Note
This datasheet PDF includes multiple part numbers: BDT61B, BDT61.
Please refer to the document for exact specifications by model.

Applications

* Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT61 60 VCBO Collector-Base Voltage BDT61A 80 V BDT61B 100 BDT61C 120 BDT61 60 VCEO Collector-Em

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