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BDT61F NPN Transistor

BDT61F Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDT61F .
High DC Current Gain. Low Saturation Voltage. Complement to Type BDT60F. Minimum Lot-to-Lot variations for robust device performance.

BDT61F Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICP

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Datasheet Details

Part number
BDT61F
Manufacturer
INCHANGE
File Size
209.44 KB
Datasheet
BDT61F-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

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NPN Transistor INCHANGE
INCHANGE BDT61F-like datasheet