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BDW30 NPN Transistor

BDW30 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor BDW30 .
Low Collector Saturation Voltage- : VCE(sat)= 0. High Switching Speed. High DC Current Gain- : hFE= 20(Min.

BDW30 Applications

* Designed for high current, high speed, high power applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous 100 V 6 V 30 A ICM Collector

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Datasheet Details

Part number
BDW30
Manufacturer
INCHANGE
File Size
176.62 KB
Datasheet
BDW30-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BDW30-like datasheet