Datasheet4U Logo Datasheet4U.com

BDW36 Silicon NPN Power Transistor

BDW36 Description

isc Silicon NPN Power Transistors .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 180V(Min). High Switching Speed. Low Collector Saturation Voltage- : VCE(sat)= 1.

BDW36 Applications

* Designed for use in industrial-military power amplifier and switching circuit applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Con

📥 Download Datasheet

Preview of BDW36 PDF
datasheet Preview Page 2

Datasheet Details

Part number
BDW36
Manufacturer
Inchange Semiconductor
File Size
208.72 KB
Datasheet
BDW36-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

📁 Related Datasheet

  • BDW30 - NPN Transistor (INCHANGE)
  • BDW32 - NPN Transistor (INCHANGE)
  • BDW34 - NPN Transistor (INCHANGE)
  • BDW39 - NPN Transistor (INCHANGE)
  • BDW10 - NPN Transistor (INCHANGE)
  • BDW12 - NPN Transistor (INCHANGE)
  • BDW21 - Bipolar NPN Device (Seme LAB)
  • BDW21C - Bipolar NPN Device (Seme LAB)

📌 All Tags

Inchange Semiconductor BDW36-like datasheet