Datasheet4U Logo Datasheet4U.com

BDW36 Datasheet - Inchange Semiconductor

BDW36 Silicon NPN Power Transistor

*Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 180V(Min) *High Switching Speed *Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 10A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use in industrial-.

BDW36 Datasheet (208.72 KB)

Preview of BDW36 PDF
BDW36 Datasheet Preview Page 2

Datasheet Details

Part number:

BDW36

Manufacturer:

Inchange Semiconductor

File Size:

208.72 KB

Description:

Silicon npn power transistor.

📁 Related Datasheet

BDW30 NPN Transistor (INCHANGE)

BDW32 NPN Transistor (INCHANGE)

BDW34 NPN Transistor (INCHANGE)

BDW39 NPN Transistor (INCHANGE)

BDW39 (BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)

BDW10 NPN Transistor (INCHANGE)

BDW12 NPN Transistor (INCHANGE)

BDW21 Bipolar NPN Device (Seme LAB)

TAGS

BDW36 Silicon NPN Power Transistor Inchange Semiconductor

BDW36 Distributor