BDW36 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistors .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 180V(Min). High Switching Speed. Low Collector Saturation Voltage- : VCE(sat)= 1.

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Datasheet Specifications

Part number: BDW36
Manufacturer: Inchange Semiconductor
File Size: 208.72 KB
Datasheet: BDW36-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in industrial-military power amplifier and switching circuit applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Con

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BDW36 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor BDW36-like datasheet