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BDW36 - Silicon NPN Power Transistor

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Datasheet Details

Part number BDW36
Manufacturer Inchange Semiconductor
File Size 208.72 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet BDW36-InchangeSemiconductor.pdf

BDW36 Product details

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 180V(Min) High Switching Speed Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 10A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in industrial-military power amplifier and switching circuit applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180

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