Datasheet Details
| Part number | BDW36 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.72 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 BDW36-InchangeSemiconductor.pdf
|
| Part number | BDW36 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.72 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
BDW36-InchangeSemiconductor.pdf
|
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 180V(Min) High Switching Speed Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 10A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in industrial-military power amplifier and switching circuit applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180
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