BDX67 Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

BDX67

Manufacturer:

INCHANGE

File Size:

209.33kb

Download:

📄 Datasheet

Description:

Npn transistor.

  • High DC Current Gain- : hFE= 1000(Min)@ IC= 10A
  • Low Saturation Voltage
  • Complement to Type BDX66/A/B/C
  • Datasheet Preview: BDX67 📥 Download PDF (209.33kb)
    Page 2 of BDX67

    BDX67 Application

    • Applications
    • Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P

    TAGS

    BDX67
    NPN
    Transistor
    INCHANGE

    📁 Related Datasheet

    BDX60 - NPN Transistor (INCHANGE)
    isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V (Min) ·High Current Capability ·Wide area of safe .

    BDX61 - NPN Transistor (INCHANGE)
    isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·High Current Capability ·Wide area of safe .

    BDX62 - Silicon PNP Darlington Power Transistor (Inchange Semiconductor)
    isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 1000(Min)@ IC= -3A ·Complement to Type.

    BDX62 - PNP SILICON DARLINGTONS (Comset Semiconductors)
    BDX62 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX62, BDX62A, BDX62B and BDX62C are mounted in TO-3 metal package. High current power d.

    BDX62A - Silicon PNP Darlington Power Transistor (Inchange Semiconductor)
    isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 1000(Min)@ IC= -3A ·Complement to Type.

    BDX62A - PNP SILICON DARLINGTONS (Comset Semiconductors)
    BDX62 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX62, BDX62A, BDX62B and BDX62C are mounted in TO-3 metal package. High current power d.

    BDX62B - Bipolar PNP Device (Seme LAB)
    BDX62B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP.

    BDX62B - Silicon PNP Darlington Power Transistor (Inchange Semiconductor)
    isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 1000(Min)@ IC= -3A ·Complement to Type.

    BDX62B - PNP SILICON DARLINGTONS (Comset Semiconductors)
    BDX62 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX62, BDX62A, BDX62B and BDX62C are mounted in TO-3 metal package. High current power d.

    BDX62C - Bipolar PNP Device (Seme LAB)
    BDX62C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP.

    Stock and price

    Sangamo Electric Company
    TRANSISTOR,BJT,DARLINGTON,NPN,120V V(BR)CEO,16A I(C),TO-3
    Quest Components
    BDX67C
    1 In Stock
    Qty : 2 units
    Unit Price : $7.5
    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts