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BDX60 - NPN Transistor

BDX60 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V (Min). High Current Capability. Wide area of safe operation. 100% avalanche test.

BDX60 Applications

* Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous ICM Collector Current-Peak IB B

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Datasheet Details

Part number
BDX60
Manufacturer
INCHANGE
File Size
197.35 KB
Datasheet
BDX60-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BDX60-like datasheet