BDX60 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V (Min). High Current Capability. Wide area of safe operation. 100% avalanche test.

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Datasheet Specifications

Part number: BDX60
Manufacturer: INCHANGE
File Size: 197.35 KB
Datasheet: BDX60-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous ICM Collector Current-Peak IB B

BDX60 Distributors

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BDX60 NPN Transistor INCHANGE

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