BT136-800E - Thyristor

Description

With TO-220 packaging Operating in 4 quadrants High commutation capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Phase control Static switching on inductive or resistive load ABSOLUT

INCHANGE

📥 Download Datasheet

Datasheet Details

Part number	BT136-800E
Manufacturer	Inchange Semiconductor
File Size	155.41 KB
Description	Thyristor
Datasheet	BT136-800E Datasheet
Additional preview pages of the BT136-800E datasheet.

📁 Similar Datasheet

BT136-800E - 4Q Triac (NXP)
BT136-800E - 4Q Triac (WeEn)
BT136-800E - Triac (BLUE ROCKET ELECTRONICS)
BT136-800E - Triac (CDIL)
BT136-800 - Triacs (NXP)
BT136-800 - 4 Quadrants Triacs (ADV)
BT136-800 - Triac (CDIL)
BT136-800F - Triacs (NXP)
BT136-800G - Triacs (NXP)
BT136-500 - Triacs (NXP)

Other Datasheets by INCHANGE

BT136-600E - Triacs
BT136-600F - Triacs
BT136 - Triacs
BT136B-600E - Triac
BT136S-600 - Triacs
BT136S-600D - Triacs
BT136S-600E - Thyristor
BT136S-800 - Triac

Full PDF Text Transcription

Click to expand full text

isc Thyristors INCHANGE Semiconductor BT136-800E DESCRIPTION ·With TO-220 packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage 800 V VRRM Repetitive peak reverse voltage 800 V IT(RSM) Average on-state current ITSM Surge non-repetitive on-state current 50HZ 60HZ 4 A 25 27 A PG(AV) Average gate power dissipation ( over any 20 ms period ) 0.5 W Tj Operating junction temperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ isc website：www.iscsemi.

Published: Sep 15, 2020 |