BT136S-600E - Thyristor

Description

With TO-252( DPAK ) packaging Operating in 4 quadrants High commutation capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Phase control Static switching on inductive or resistive load

INCHANGE

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Datasheet Details

Part number	BT136S-600E
Manufacturer	Inchange Semiconductor
File Size	155.58 KB
Description	Thyristor
Datasheet	BT136S-600E Datasheet
Additional preview pages of the BT136S-600E datasheet.

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isc Thyristors INCHANGE Semiconductor BT136S-600E DESCRIPTION ·With TO-252( DPAK ) packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RSM) Average on-state current ITSM Surge non-repetitive on-state current 50HZ 60HZ 600 V 600 V 4 A 25 27 A PG(AV) Average gate power dissipation ( over any 20 ms period ) 0.5 W Tj Operating junction temperature Tstg Storage temperature -40~125 ℃ -40~150 ℃ isc website：www.iscsemi.

Published: Sep 15, 2020 |