Datasheet Details
| Part number | BT136S-600E |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 155.58 KB |
| Description | Thyristor |
| Datasheet | BT136S-600E-INCHANGE.pdf |
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Overview: isc Thyristors INCHANGE Semiconductor BT136S-600E.
| Part number | BT136S-600E |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 155.58 KB |
| Description | Thyristor |
| Datasheet | BT136S-600E-INCHANGE.pdf |
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·With TO-252( DPAK ) packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RSM) Average on-state current ITSM Surge non-repetitive on-state current 50HZ 60HZ 600 V 600 V 4 A 25 27 A PG(AV) Average gate power dissipation ( over any 20 ms period ) 0.5 W Tj Operating junction temperature Tstg Storage temperature -40~125 ℃ -40~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BT136S-600E ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated;
VD=VDRM Rated;
Tj=125℃ VTM On-state voltage IT=5A IGT Gate-trigger current Ⅰ Ⅱ VD =12V;IT=0.1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BT136S-600E | Triacs | NXP |
 |
BT136S-600E | 4Q Triac | WeEn |
|
BT136S-600 | 4Q Triac | NXP |
|
BT136S-600 | 4Q Triac | WeEn |
|
BT136S-600D | 4Q Triac | NXP |
| Part Number | Description |
|---|---|
| BT136S-600 | Triacs |
| BT136S-600D | Triacs |
| BT136S-800 | Triac |
| BT136 | Triacs |
| BT136-600E | Triacs |
| BT136-600F | Triacs |
| BT136-800E | Thyristor |
| BT136B-600E | Triac |
| BT136X-600D | Thyristor |
| BT134-800E | Thyristor |