With TO-252( DPAK ) packaging
Operating in 4 quadrants
High commutation capability
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
Switching applications
Phase control
Static switching on inductive or resistive load
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isc Thyristors
INCHANGE Semiconductor
BT136S-600E
DESCRIPTION ·With TO-252( DPAK ) packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RSM) Average on-state current ITSM Surge non-repetitive on-state current
50HZ 60HZ
600
V
600
V
4
A
25 27
A
PG(AV) Average gate power dissipation ( over any 20 ms period )
0.5
W
Tj
Operating junction temperature
Tstg Storage temperature
-40~125 ℃ -40~150 ℃
isc website：www.iscsemi.
BT136S-600E Datasheet
