| Part Number | BT136S-600E Datasheet |
|---|---|
| Manufacturer | WeEn |
| Overview |
Planar passivated sensitive gate four quadrant triac in a SOT428 (DPAK) surface-mountable plastic package intended for use in general purpose bidirectional switching and phase control applications. Th.
and benefits
* Direct triggering from low power drivers and logic ICs * High blocking voltage capability * Low holding current for low current loads and lowest EMI at commutation * Planar passivated for voltage ruggedness and reliability * Sensitive gate * Surface-mountable package * Triggering in a. |
BT136S-600E Datasheet and Specifications PDF
The BT136S-600E is a 4Q Triac.
| Part Number | BT136S-600E Datasheet |
|---|---|
| Description | Triacs |
| Manufacturer | NXP Semiconductors |
| Overview | Glass passivated triacs in a plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal c. METER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb ≤ 107 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; IG = 0.2 A;. |
| Part Number | BT136S-600E Datasheet |
|---|---|
| Description | Thyristor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·With TO-252( DPAK ) packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching appli. rent IDRM Repetitive peak off-state current VR=VRRM Rated; VD=VDRM Rated; Tj=125℃ VTM On-state voltage IT=5A IGT Gate-trigger current Ⅰ Ⅱ VD =12V;IT=0.1A; Ⅲ Ⅳ VGT Gate-trigger voltage VD =12V;IT=0.1A; Rth (j-mb) Junction to mounting base Half cycle MIN MAX UNIT 0.5 mA 1.7 V 35 3. |