Download BT169G Datasheet PDF
Inchange Semiconductor
BT169G
FEATURES - With TO-92 package - Sensitive gate trigger current - Low reverse and forward blocking current - Low holding current - For general purpose switching and phase control applications. - Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak off-state voltage IT(AV) Average on-state current IT(RMS) RMS on-state current PGM Peak gate power PG(AV) Average gate power ITSM Non-repetitive peak on-state current Tj Operating junction temperature Tstg Storage temperature 600 600 0.5 0.8 2 0.1 8 125 -40~+ 150 UNIT V V A A W W A ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS VDRM Repetitive peak off-state voltage ID=0.1m A VRRM Repetitive peak reverse voltage ID=0.5m A IRRM Repetitive peak reverse current VRRM=600V IDRM Repetitive peak off-state current VDRM=600V Gate trigger...