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BU210 - NPN Transistor

BU210 Description

isc Silicon NPN Power Transistor .
High Collector-Base Breakdown Voltage- : V(BR)CBO= 400V (Min). High Current Capability. High Switching Speed. 100% avalanche tested.

BU210 Applications

* Designed for TV horizontal output and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 12 A ICM

📥 Download Datasheet

Preview of BU210 PDF
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Datasheet Details

Part number
BU210
Manufacturer
INCHANGE
File Size
200.26 KB
Datasheet
BU210-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BU210-like datasheet