BU506A Datasheet - INCHANGE

BU506A, NPN Transistor

isc Silicon NPN Power Transistor DESCRIPTION *High Voltage *High Switching Speed *Minimum Lot-to-Lot variations for robust device perform

Applications

* Designed for use in horizontal deflection circuits of color TV receivers and in line-operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage-VBE=0 1350 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base V

BU506A-INCHANGE.pdf