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BU506D - Silicon diffused power transistors

General Description

High-voltage, high-speed, switching NPN power transistor in a TO-220AB package.

The BU506D has an integrated efficiency diode.

Horizontal deflection circuits of colour television receivers

Line-operated switch-mode applications.

Key Features

  • 00 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BU506; BU506D Silicon diffused power transistors Product specification Supersedes data of December 1991 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, switching NPN power transistor in a TO-220AB package. The BU506D has an integrated efficiency diode. BU506; BU506D 2 2 APPLICATIONS • Horizontal deflection circuits of colour television receivers • Line-operated switch-mode applications. PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter Fig.1 Simplified outline (TO-220AB) and symbols. MBK106 1 MBB008 1 3 MBB077 3 1 2 3 a. BU506. b. BU506D.