| Part number | BU506DF |
|---|---|
| Download | BU506DF Datasheet (PDF) |
| File Size | 210.00 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
NXP Semiconductors |
BU506DF | Silicon diffused power transistors |
SavantIC |
BU506DF | SILICON POWER TRANSISTOR |
|
NXP Semiconductors |
BU506D | Silicon diffused power transistors |
|
SavantIC |
BU506D | SILICON POWER TRANSISTOR |
|
NXP Semiconductors |
BU506 | Silicon diffused power transistors |
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU506DF TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1.33A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 3A;.
