| Part Number | BU506DF Datasheet |
|---|---|
| Manufacturer | SavantIC |
| Overview | ·With TO-220Fa package ·High voltage ·High-speed switching ·Built-in damper diode. APPLICATIONS ·Horizontal deflection circuits of colour TV receivers. ·Line-operated switch-mode applications PINNING . TER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain Collector cut-off current Emitter cut-off current Diode forward voltage CONDITIONS IC=100mA; IB=0,L=25mH IC=3A; IB=1.33A IC=3A; IB=1.33A IC=0.1A ; VCE=5V IC=3. |
BU506DF Datasheet and Specifications PDF
The BU506DF is a SILICON POWER TRANSISTOR.
| Part Number | BU506DF Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Voltage ·High Switching Speed ·Built-in Integrated Efficiency Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizon. sc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU506DF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1.3. |
| Part Number | BU506DF Datasheet |
|---|---|
| Description | Silicon diffused power transistors |
| Manufacturer | NXP Semiconductors |
| Overview |
High-voltage, high-speed switching NPN power transistor in a SOT186 package. The BU506DF has an integrated efficiency diode. APPLICATIONS • Horizontal deflection circuits of colour television receiver.
e load; see Fig.11 VBE = 0 open base CONDITIONS DESCRIPTION base collector emitter
1 2 3
MBC668
BU506F; BU506DF
2 2 1
MBB008
1 3
MBB077
3
a. BU506F.
b. BU506DF.
Front view
Fig.1 Simplified outline (SOT186) and symbols.
TYP. * * * 1.5 * * * * 0.7 MAX. 1500 700 1 2.2 3 5 8 20 * UNIT V V V V. |