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BU536 Datasheet - INCHANGE

BU536 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO = 480V(Min.) *High Speed Switching *High Power Dissipation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use in switching mode power supply. ABSOLUTE MAXIMUM RATINGS.

BU536-INCHANGE.pdf

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Datasheet Details

Part number:

BU536

Manufacturer:

INCHANGE

File Size:

201.23 KB

Description:

Npn transistor.

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