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BU536 NPN Transistor

BU536 Description

isc Silicon NPN Power Transistor BU536 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 480V(Min. High Speed Switching. High Power Dissipation. Minimum Lot-to-Lot variat.

BU536 Applications

* Designed for use in switching mode power supply. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage RBE≈100Ω 1100 V VCES Collector-Emitter Voltage 1100 V VCEO Collector-Emitter Voltage 480 V VEBO Emitter-Base Voltage 6 V IC Collecto

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Datasheet Details

Part number
BU536
Manufacturer
INCHANGE
File Size
201.23 KB
Datasheet
BU536-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BU536-like datasheet