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BU546 NPN Transistor

BU546 Description

isc Silicon NPN Power Transistor BU546 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 550V(Min. High Speed Switching. High Power Dissipation. Minimum Lot-to-Lot variat.

BU546 Applications

* Designed for use in switching mode power supply. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current

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Datasheet Details

Part number
BU546
Manufacturer
INCHANGE
File Size
202.11 KB
Datasheet
BU546-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BU546-like datasheet