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BUF410I NPN Transistor

BUF410I Description

isc Silicon NPN Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min. High Speed Switching. 100% avalanche tested. Minimum Lot-to-Lot variat.

BUF410I Applications

* Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VBE= -1.5V 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Curre

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Datasheet Details

Part number
BUF410I
Manufacturer
INCHANGE
File Size
212.15 KB
Datasheet
BUF410I-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
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