BUF410I NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min. High Speed Switching. 100% avalanche tested. Minimum Lot-to-Lot variat.

📥 Download Datasheet

BUF410I Datasheet Preview — Preview of BUF410I PDF

Datasheet Specifications

Part number: BUF410I
Manufacturer: INCHANGE
File Size: 212.15 KB
Datasheet: BUF410I-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VBE= -1.5V 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Curre

BUF410I Distributors

📁 Related Datasheet

BUF410 BUF410A BUF405A BUF405AFP BUF420 BUF420A

📌 All Tags

BUF410I NPN Transistor INCHANGE

INCHANGE BUF410I-like datasheet