BUF742 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector. Emitter Breakdown Voltage : V(BR)CEO = 400V(Min. Collector Saturation Voltage : VCE(sat) = 0. Mini.

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Datasheet Specifications

Part number: BUF742
Manufacturer: INCHANGE
File Size: 211.33 KB
Datasheet: BUF742-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for electronic lamp ballast circuits switch-mode power supplies applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 11 V IC Collector Current-Con

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BUF742 NPN Transistor INCHANGE

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