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BUF742 NPN Transistor

BUF742 Description

isc Silicon NPN Power Transistor .
Collector. Emitter Breakdown Voltage : V(BR)CEO = 400V(Min. Collector Saturation Voltage : VCE(sat) = 0. Mini.

BUF742 Applications

* Designed for electronic lamp ballast circuits switch-mode power supplies applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 11 V IC Collector Current-Con

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Datasheet Details

Part number
BUF742
Manufacturer
INCHANGE
File Size
211.33 KB
Datasheet
BUF742-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BUF742-like datasheet