BUY79
INCHANGE
202.51kb
Npn transistor. *Collector-Emitter Breakdown Voltage- : V(BR)CEO = 350V(Min.) *Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC=
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BUY70A - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min) ·Low Collector-Emitter Saturation Voltage.
BUY70B - Bipolar NPN Device
(Seme LAB)
BUY70B
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
BUY70B - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 325V(Min) ·Low Collector-Emitter Saturation Voltage.
BUY70C - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min) ·Low Collector-Emitter Saturation Voltag.
BUY71 - Bipolar NPN Device
(Seme LAB)
BUY71
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN .
BUY71 - Silicon NPN Transistor
(Toshiba)
SILICON NPN TRIPLE DIFFUSED MESA TYPE
BUY71
TV HORIZONTAL OUTPUT APPLICATION.
FEATURES . High Voltage : V CEX=2200V . Fast Switching : tf=0.7^s (Typ.
BUY71 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V (Min) ·Minimum Lot-to-Lot .
BUY72 - Bipolar NPN Device
(Seme LAB)
BUY72
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN .
BUY72 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.) ·Low Collector Saturation Voltage-
: VCE(sa.
BUY73 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.) ·Low Collector Saturation Voltage-
: VCE(sa.
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