BUY79 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 350V(Min. Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1. M.

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Datasheet Specifications

Part number: BUY79
Manufacturer: INCHANGE
File Size: 202.51 KB
Datasheet: BUY79-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use as high-speed power switches at high voltages. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 750 V VCES Collector-Emitter Voltage 750 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 7 V IC Collec

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BUY79 NPN Transistor INCHANGE

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