D857 Silicon NPN Power Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD857 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2SB.

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Datasheet Specifications

Part number: D857
Manufacturer: INCHANGE
File Size: 135.24 KB
Datasheet: D857-INCHANGE.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Colle

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D857 Silicon NPN Power Transistor INCHANGE

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