DMN90H2D2HCTI Datasheet - INCHANGE

Datasheet Details

Part number:

DMN90H2D2HCTI

Manufacturer:

INCHANGE

File Size:

247.13 KB

Description:

N-Channel MOSFET

isc N-Channel MOSFET Transistor DMN90H2D2HCTI FEATURES *Drain Current *ID= 6A@ TC=25℃ *Drain Source Voltage- : VDSS= 900V(Min) *Static Drain-Source On-Resistance : RDS(on) = 2.2Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance an

DMN90H2D2HCTI-INCHANGE.pdf

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DMN90H2D2HCTI, N-Channel MOSFET

*Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 6 A IDM Drain Current-Single Pluse

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DMN90H2D2HCTI N-Channel MOSFET INCHANGE

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