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DMN95H8D5HCT N-Channel MOSFET

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Description

isc N-Channel Mosfet Transistor *.

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Datasheet Specifications

Part number
DMN95H8D5HCT
Manufacturer
INCHANGE
File Size
254.18 KB
Datasheet
DMN95H8D5HCT-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Drain Current ID= 2.5A@ TC=25℃
* Drain Source Voltage- : VDSS= 950V(Min)
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 950 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 2.5 A IDM Pulse Drain Current 3 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Oper

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