DMN95H8D5HCTI - N-Channel MOSFET

INCHANGE

DMN95H8D5HCTI Datasheet Preview — Preview of DMN95H8D5HCTI PDF

Datasheet Details

Part number	DMN95H8D5HCTI
Manufacturer	INCHANGE
File Size	247.08 KB
Description	N-Channel MOSFET
Datasheet	DMN95H8D5HCTI-INCHANGE.pdf

DMN95H8D5HCTI Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 950 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2.5 A IDM Drain Current-Single Pluse 3 A PD Total Dissipation @TC=25℃ 30 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c T

Features

Drain Current.
ID= 2.5A@ TC=25℃.
Drain Source Voltage- : VDSS= 950V(Min).
Static Drain-Source On-Resistance : RDS(on) = 7.0Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: May 10, 2021 |