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DMP6180SK3-13 P-Channel MOSFET

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Description

isc P-Channel MOSFET Transistor DMP6180SK3-13 *.

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Datasheet Specifications

Part number
DMP6180SK3-13
Manufacturer
INCHANGE
File Size
250.72 KB
Datasheet
DMP6180SK3-13-INCHANGE.pdf
Description
P-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on)≦110mΩ(@VGS= -10V; ID= -12A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Power Management Functions
* DC / DC Converters
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -14 PD Total Dissipation @TC=25℃ 40 Tj Max. Operating Junction Temperature 150

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