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ET206 NPN Transistor

ET206 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor ET206 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device pe.

ET206 Applications

* Switching regulator and high voltage switching applications.
* High frequency inverters
* General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base v

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Datasheet Details

Part number
ET206
Manufacturer
INCHANGE
File Size
208.51 KB
Datasheet
ET206-INCHANGE.pdf
Description
NPN Transistor

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INCHANGE ET206-like datasheet