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FCH130N60 N-Channel MOSFET

FCH130N60 Description

isc N-Channel MOSFET Transistor FCH130N60 *.

FCH130N60 Features

* With TO-247 packaging
* Drain Source Voltage- : VDSS ≥ 600V
* Static drain-source on-resistance: RDS(on) ≤ 130mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FCH130N60 Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 28 A IDM Drain Current-Single Pulsed 84 A PD Total Dissipation 27

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Datasheet Details

Part number
FCH130N60
Manufacturer
INCHANGE
File Size
356.65 KB
Datasheet
FCH130N60-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE FCH130N60-like datasheet