Datasheet4U Logo Datasheet4U.com

FCH170N60 N-Channel MOSFET

FCH170N60 Description

isc N-Channel MOSFET Transistor FCH170N60 *.

FCH170N60 Features

* With TO-247 packaging
* Drain Source Voltage- : VDSS ≥ 600V
* Static drain-source on-resistance: RDS(on) ≤ 170mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FCH170N60 Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 22 A IDM Drain Current-Single Pulsed 66 A PD Total Dissipation 22

📥 Download Datasheet

Preview of FCH170N60 PDF
datasheet Preview Page 2

Datasheet Details

Part number
FCH170N60
Manufacturer
INCHANGE
File Size
356.15 KB
Datasheet
FCH170N60-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • FCH104N60 - N-Channel MOSFET (Fairchild Semiconductor)
  • FCH104N60F - MOSFET (Fairchild Semiconductor)
  • FCH104N60F-F085 - N-Channel MOSFET (ON Semiconductor)
  • FCH10A03L - Schottky Barrier Diode (Kyocera)
  • FCH10A04 - Schottky Barrier Diode (Nihon Inter Electronics)
  • FCH10A045 - Dual Common Cathode Schottky Barrier Rectifier (Thinki Semiconductor)
  • FCH10A06 - Schottky Barrier Diode (Nihon Inter Electronics Corporation)
  • FCH10A09 - Schottky Barrier Diode (Nihon Inter Electronics Corporation)

📌 All Tags

INCHANGE FCH170N60-like datasheet