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FCP190N60 N-Channel MOSFET

FCP190N60 Description

isc N-Channel MOSFET Transistor FCP190N60 *.

FCP190N60 Features

* With TO-220 packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FCP190N60 Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 20.2 A IDM Drain Current-Single Pulsed 60.6 A PD Total Dissipation

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Datasheet Details

Part number
FCP190N60
Manufacturer
INCHANGE
File Size
252.96 KB
Datasheet
FCP190N60-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE FCP190N60-like datasheet