FCP190N60 Datasheet - INCHANGE

FCP190N60, N-Channel MOSFET

isc N-Channel MOSFET Transistor FCP190N60 *

Features

* With TO-220 packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 20.2 A IDM Drain Current-Single Pulsed 60.6 A PD Total Dissipation

FCP190N60-INCHANGE.pdf