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FCP36N60N N-Channel MOSFET

FCP36N60N Description

isc N-Channel MOSFET Transistor *.

FCP36N60N Features

* With TO-220 packaging
* High speed switching
* Very high commutation ruggedness
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operationz

FCP36N60N Applications

* PFC stages
* LCD & PDP TV
* Power supply
* Switching applications INCHANGE Semiconductor FCP36N60N
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-

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Datasheet Details

Part number
FCP36N60N
Manufacturer
INCHANGE
File Size
203.03 KB
Datasheet
FCP36N60N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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