FDA44N50 Datasheet - INCHANGE

FDA44N50, N-Channel MOSFET

isc N-Channel MOSFET Transistor *

Features

* With TO-3PN packaging
* With low gate drive requirements
* Easy to drive
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 44 IDM Drain Current-Single Pulsed 176 PD Total Dissipation 750 Tj Operating Junction Temperature -55~

FDA44N50-INCHANGE.pdf