FDP8441 Datasheet - INCHANGE

FDP8441, N-Channel MOSFET

isc N-Channel MOSFET Transistor *

Features

* With TO-220 packaging
* Drain Source Voltage- : VDSS ≥ 40V
* Static drain-source on-resistance: RDS(on) ≤ 2.7mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 80 A PD Total Dissipation 300 W Tj Operating Junction Temperature

FDP8441-INCHANGE.pdf