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FDP8860 N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number
FDP8860
Manufacturer
INCHANGE
File Size
279.05 KB
Datasheet
FDP8860-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* With TO-220 packaging
* Drain Source Voltage- : VDSS ≥ 30V
* Static drain-source on-resistance: RDS(on) ≤ 2.5mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 80 A PD Total Dissipation 254 W Tj Operating Junction Temperature

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📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE FDP8860-like datasheet