FDP8870-F085

N-Channel Power MOSFET

ON Semiconductor

FDP8870-F085 Features

* rDS(ON) = 4.1mΩ, VGS = 10V, ID = 35A

* rDS(ON) = 4.6mΩ, VGS = 4.5V, ID = 35A

* High performance trench technology for extremely low rDS(ON)

* Low gate charge

* High power and current handling capability x Qualified to AEC Q101 x RoHS Compliant (FLANGE) DRAI

FDP8870-F085 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications

* DC/DC converters Fea.

FDP8870-F085 Datasheet (388.53 KB)