FDP8870-F085 N-Channel Power MOSFET

ON Semiconductor

Description

® FDP8870-F085 N-Channel PowerTrench MOSFET FDP8870-F085 N-Channel PowerTrench® MOSFET 30V, 156A, 4.1mΩ General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number: FDP8870-F085
Manufacturer: ON Semiconductor ↗
File Size: 388.53 KB
Datasheet: FDP8870-F085-ONSemiconductor.pdf
Description: N-Channel Power MOSFET

Features

* rDS(ON) = 4.1mΩ, VGS = 10V, ID = 35A
* rDS(ON) = 4.6mΩ, VGS = 4.5V, ID = 35A
* High performance trench technology for extremely low rDS(ON)
* Low gate charge
* High power and current handling capability x Qualified to AEC Q101 x RoHS Compliant (FLANGE) DRAI

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FDP8870-F085 N-Channel Power MOSFET ON Semiconductor

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