FDP8D5N10C N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, Shielded Gate, POWERTRENCH) 100 V, 76 A, 8.5 mW FDP8D5N10C, FDPF8D5N10C General .
This N. Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDP8D5N10C
Manufacturer: ON Semiconductor ↗
File Size: 410.90 KB
Datasheet: FDP8D5N10C-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max RDS(on) = 8.5 mW at VGS = 10 V, ID = 76 A
* Extremely Low Reverse Recovery Charge, Qrr
* 100% UIL Tested

Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Motor Drives and Uninterruptible Power Supplies
* Micro Solar Inverter DATA SHEET www. onsemi. com VDS RDS(ON) MAX ID MAX 100 V 8.5 mW @ 10 V 76 A
* Drain current limited by maximum junction temperatur

FDP8D5N10C Distributors

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FDP8D5N10C N-Channel MOSFET ON Semiconductor

ON Semiconductor FDP8D5N10C-like datasheet