FDP8874

N-Channel MOSFET

ON Semiconductor

FDP8874 Features

* rDS(ON) = 5.3mΩ, VGS = 10V, ID = 40A

* rDS(ON) = 6.6mΩ, VGS = 4.5V, ID = 40A

* High performance trench technology for extremely low rDS(ON)

* Low gate charge

* High power and current handling capability

* RoHS Compliant (FLANGE) DRAIN SOURCE DRAIN

FDP8874 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications

* DC/DC converters Fea.

FDP8874 Datasheet (330.48 KB)