FDP8874 N-Channel MOSFET

Fairchild Semiconductor

Description

FDP8874 November 2004 FDP8874 N-Channel PowerTrench® MOSFET 30V, 114A, 5.3mΩ General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using www.

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Datasheet Specifications

Part number: FDP8874
Manufacturer: Fairchild Semiconductor
File Size: 296.38 KB
Datasheet: FDP8874_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* rDS(ON) = 5.3mΩ , VGS = 10V, ID = 40A
* rDS(ON) = 6.6mΩ , VGS = 4.5V, ID = 40A
* High performance trench technology for extremely low rDS(ON)

Applications

* DC/DC converters
* High power and current handling capability DRAIN (FLANGE) D SOURCE DRAIN GATE G S TO-220AB FDP SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (

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FDP8874 N-Channel MOSFET Fairchild Semiconductor

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