FJB102 Datasheet - INCHANGE

FJB102, NPN Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor FJB102 .
High DC Current Gain- : hFE = 1000(Min)@ IC= 3A. Low Collector-Emitter Saturation Voltage. 100% tested. Minimum Lot-to-Lot variations.

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FJB102-INCHANGE.pdf

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Datasheet Details

Part number:

FJB102

Manufacturer:

INCHANGE

File Size:

210.51 KB

Description:

NPN Transistor

Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage IC Collector Current-Continuous ICP Collect

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