FKI10126
INCHANGE
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N-channel mosfet.
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FKI10126 - Power MOSFET
(SANKEN)
100 V, 41 A, 8.8 mΩ Low RDS(ON) N ch Trench Power MOSFET
FKI10126
Features
V(BR)DSS --------------------------------100 V (ID = 100 µA) ID ------.
FKI10198 - Power MOSFET
(SANKEN)
100 V, 31 A, 13.2 mΩ Low RDS(ON) N ch Trench Power MOSFET
FKI10198
Features
V(BR)DSS --------------------------------100 V (ID = 100 µA) ID -----.
FKI10198 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=31A@ TC=25℃ ·Drain Source Voltage-
: VDSS=100V(Min) ·Static Drain-Source On-Resistance
: .
FKI10300 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤28.8mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche te.
FKI10300 - N-ch Trench Power MOSFET
(SANKEN)
100 V, 23 A, 20.2 mΩ Low RDS(ON) N ch Trench Power MOSFET
FKI10300
Features
V(BR)DSS --------------------------------100 V (ID = 100 µA) ID -----.
FKI10531 - N-ch Trench Power MOSFET
(SANKEN)
100 V, 18 A, 34.7 mΩ Low RDS(ON) N ch Trench Power MOSFET
FKI10531
Features
V(BR)DSS --------------------------------100 V (ID = 100 µA) ID -----.
FKI10531 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage-
: VDSS=100V(Min) ·Static Drain-Source On-Resistance
: .
FKI06051 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=69A@ TC=25℃ ·Drain Source Voltage-
: VDSS=60V(Min) ·Static Drain-Source On-Resistance
: R.
FKI06051 - Power MOSFET
(Sanken)
60 V, 69 A, 3.9 mΩ Low RDS(ON) N ch Trench Power MOSFET
FKI06051
Features
V(BR)DSS --------------------------------- 60 V (ID = 100 µA) ID ------.
FKI06075 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 8mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-t.