H5N3011P N-Channel MOSFET

INCHANGE

H5N3011P Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor H5N3011P *.

H5N3011P Features

* With TO-3PN packaging
* High speed switching
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

H5N3011P Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 300 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 88 IDM Drain Current-Single Pulsed 176 PD Total Dissipation 150 Tj Operating Junction

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Datasheet Details

Part number: H5N3011P
Manufacturer: INCHANGE
File Size: 253.21 KB
Datasheet: H5N3011P-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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