IPA65R660CFD N-Channel MOSFET

INCHANGE

Description

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number: IPA65R660CFD
Manufacturer: INCHANGE
File Size: 221.19 KB
Datasheet: IPA65R660CFD-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* With TO-220F Package
* Drain Source Voltage- : VDSS=650V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.66Ω(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 6 3.8 A IDM Drain Current-Single Pulsed 17 A PD Total Dissipa

IPA65R660CFD Distributors

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IPA65R660CFD N-Channel MOSFET INCHANGE

INCHANGE IPA65R660CFD-like datasheet