IPA65R190CFD Datasheet - INCHANGE

IPA65R190CFD, N-Channel MOSFET

Isc N-Channel MOSFET Transistor *

Features

* With TO-220F package
* Low input capacitance and gate charge
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications INCHANGE Semiconductor IPA65R190CFD
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±30 20.2 12.8 66

IPA65R190CFD-INCHANGE.pdf