Datasheet Details
- Part number
- IPA65R045C7
- Manufacturer
- INCHANGE
- File Size
- 196.83 KB
- Datasheet
- IPA65R045C7-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPA65R045C7 Description
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA65R045C7 *.
IPA65R045C7 Features
* With To-220F package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IPA65R045C7 Applications
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±20
18 11
212
PD
Total Dissipation @TC=25℃
35
Tch
Max. Operating J
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