Datasheet Details
- Part number
- IPA65R280C6
- Manufacturer
- INCHANGE
- File Size
- 221.52 KB
- Datasheet
- IPA65R280C6-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPA65R280C6 Description
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor *.
IPA65R280C6 Features
* With TO-220F Package
* Drain Source Voltage-
: VDSS=650V(Min)
* Static Drain-Source On-Resistance
: RDS(on) = 0.28Ω(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IPA65R280C6 Applications
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous @Tc=25℃
(VGS at 10V)
Tc=100℃
13.8 8.7
A
IDM
Drain Current-Single Pulsed
39
A
PD
Total Diss
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